LED development history

1907  British scientist Henry Joseph Round discovered that luminescence can be found in silicon carbide crystals when current is applied.

1927  Russian scientist Oleg Lossew once again observed the “Round effect” of light emission. Then he examined and described this phenomenon in more detail

1935 The French scientist Georges Destriau published a report on the elector-luminescence phenomenon of zinc sulfide powder. To commemorate the predecessors, he named this effect “Lossew light” and proposed the term “elector-luminescence phenomenon” today.

1950  The development of semiconductor physics in the early 1950s provided theoretical basis research for elector-optical phenomena, while  the semiconductor industry provided pure, doped semiconductor wafers for LED research

1962  Nick Holon yak, Jr. and S.F. Bevacqua of GF Company used GaAsP materials to make red light-emitting diodes. This is the first visible light LED, regarded as the ancestor of modern LED

1965  Commercialization of infrared light emitting LED, and commercialization of red phosphorous gallium arsenide LED soon

1968  Nitrogen-doped gallium arsenide LEDs appeared

1970s  There are gallium phosphate green LEDs and silicon carbide yellow LEDs. The introduction of new materials improves the luminous efficiency of LEDs and extends the luminous spectrum of LEDs to orange, yellow and green light.

1993  Nichia Chemical Company’s Nakamura Shuji and others developed the first bright blue gallium nitride LED, and then used indium gallium nitride semiconductor to produce ultra-bright ultraviolet, blue and green LEDs, using aluminum gallium indium phosphide The semiconductor produced super bright red and yellow LEDs. A white LED was also designed.

1999  Commercialization of LEDs with output power up to 1W

Currently The global LED industry has three technical routes. The first is the sapphire substrate route represented by Japan’s Nichia. It is currently the most widely used and most mature technology, but its disadvantage is that it cannot be made in large sizes. The second is the silicon carbide substrate LED technology route represented by American CREE Company. The material quality is good, but its material cost is high and it is difficult to achieve large size. The third is the silicon substrate LED technology invented by China Jingneng Optoelectronics, which has the advantages of low material cost, good performance, and large-scale manufacturing.

Post time: Jan-27-2021